BAT81S...bat83s vishay semiconductors 1 (4) rev. 4, 12-feb-01 www.vishay.com document number 85512 small signal schottky barrier diodes features integrated protection ring against static discharge low capacitance low leakage current low forward voltage drop very low switching time applications general purpose and switching schottky barrier diode hfdetector protection circuit diode for low currents with a low supply voltage small battery charger power supplies dc / dc converter for notebooks 94 9367 order instruction type type differentiation ordering code remarks BAT81S v =40v BAT81Stap ammopack BAT81S v r = 40 v BAT81Str tape and reel bat82s v r =50v bat82stap ammopack bat82s v r = 50 v bat82str tape and reel bat83s v =60v bat83stap ammopack bat83s v r = 60 v bat83str tape and reel absolute maximum ratings t j = 25 c parameter test conditions type symbol value unit BAT81S v r 40 v reverse voltage bat82s v r 50 v g bat83s v r 60 v peak forward surge current t p 10ms i fsm 500 ma repetitive peak forward current t p 1s i frm 150 ma forward current i f 30 ma junction temperature t j 125 c storage temperature range t stg 65...+150 c
BAT81S...bat83s vishay semiconductors 2 (4) rev. 4, 12-feb 01 www.vishay.com document number 85512 maximum thermal resistance t j = 25 c parameter test conditions symbol value unit junction ambient l=4 mm, t l =constant r thja 320 k/w electrical characteristics t j = 25 c parameter test conditions type symbol min typ max unit i f =0.1ma v f 330 mv forward voltage i f =1ma v f 410 mv g i f =15ma v f 1 v reverse current v r =v rmax i r 200 na diode capacitance v r =1 v, f=1mhz c d 1.6 pf characteristics (t j = 25 c unless otherwise specified) 0 2 4 6 8 10 12 14 25 50 75 100 125 150 t j junction temperature ( 5 c ) 15794 v r = 60 v p reverse power dissipation ( mw ) r 540k/w p r limit @100%v r p r limit @80%v r r thja = figure 1. max. reverse power dissipation vs. junction temperature 0.1 1.0 10.0 100.0 1000.0 25 50 75 100 125 150 0.1 1.0 10.0 100.0 1000.0 25 50 75 100 125 150 t j junction temperature ( 5 c ) 15795 v r = v rrm i reverse current ( a ) r figure 2. reverse current vs. junction temperature 0 0.5 1.0 1.5 2.0 i forward current ( a ) v f forward voltage ( v ) 15796 f t j =25 5 c t j = 150 5 c 0.1 1 10 100 1000 0.01 figure 3. forward current vs. forward voltage 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1.0 10.0 100.0 v r reverse voltage ( v ) 15797 c diode capacitance ( pf ) d f=1mhz figure 4. diode capacitance vs. reverse voltage
BAT81S...bat83s vishay semiconductors 3 (4) rev. 4, 12-feb-01 www.vishay.com document number 85512 dimensions in mm cathode identification j 1.7 max. j 0.55 max. 3.9 max. 26 min. technical drawings according to din specifications 94 9366 standard glass case 54 a 2 din 41880 jedec do 35 weight max. 0.3 g 26 min.
BAT81S...bat83s vishay semiconductors 4 (4) rev. 4, 12-feb 01 www.vishay.com document number 85512 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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